INFRARED OPTOELECTRONIC PROPERTIES OF METAL-GERMANIUM SCHOTTKY BARRIERS

被引：12

作者：

CHAN, EY

CARD, HC

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027

[2] COLUMBIA UNIV,COLUMBIA RADIAT LAB,NEW YORK,NY 10027

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期

关键词：

D O I：

10.1109/T-ED.1980.19823

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：78 / 83

页数：6

共 14 条

[1]

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[2] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[3] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&

[4] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[6]

FORMENKS VS, 1966, HDB THERMIONIC PROPE

[7] DETECTORS FOR LIGHTWAVE COMMUNICATION [J].

MELCHIOR, H .

PHYSICS TODAY, 1977, 30 (11) :32-39

[8]

MELCHIOR H, 1966, IEEE T ELECTRON DEV, V13, P829

[9]

MELCHOIR H, 1970, P IEEE, V58

[10]

PERSONICK SD, 1977, P IEEE, V65

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