REACTIVELY SPUTTERED TANTALUM THIN FILM RESISTORS .1. PHYSICAL AND ELECTRICAL PROPERTIES

被引：21
作者：
HARDY, WR
SHEWCHUN, J
KUENZIG, D
TAM, C
机构：
来源：
THIN SOLID FILMS | 1971年 / 8卷 / 02期
关键词：
D O I：
10.1016/0040-6090(71)90001-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：81 / &
相关论文
共 31 条
[21]   A NEW STRUCTURE IN TANTALUM THIN FILMS (VAPOR DEPOSITION SUPERCONDUCTIVITY SPUTTERING X-RAY DIFFRACTION E) [J].
READ, MH ;
ALTMAN, C .
APPLIED PHYSICS LETTERS, 1965, 7 (03) :51-&
[22]   POOLE-FRENKEL EFFECT AND SCHOTTKY EFFECT IN METAL-INSULATOR-METAL SYSTEMS [J].
SIMMONS, JG .
PHYSICAL REVIEW, 1967, 155 (03) :657-&
[23]   GENERALIZED THERMAL J-V CHARACTERISTIC FOR ELECTRIC TUNNEL EFFECT [J].
SIMMONS, JG .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2655-&
[24]   GENERALIZED FORMULA FOR ELECTRIC TUNNEL EFFECT BETWEEN SIMILAR ELECTRODES SEPARATED BY A THIN INSULATING FILM [J].
SIMMONS, JG .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1793-&
[25]   EFFECT OF BACKGROUND-GAS IMPURITIES ON FORMATION OF SPUTTERED BETA-TANTALUM FILMS [J].
SOSNIAK, J ;
POLITO, WJ ;
ROZGONYI, GA .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3041-&
[26]  
STANDLEY GL, 1964, J APPL PHYSICS, V35, P1530
[27]   THERMAL OXIDATION OF SPUTTERED TANTALUM THIN FILMS BETWEEN 100 DEGREES C AND 525 DEGREES C [J].
STEIDEL, CA ;
GERSTENBERG, D .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3828-+
[28]  
ASTM40788 POWD IND F
[29]  
ASTM15243 POWD IND F
[30]  
ASTM8255 POWD IND FI
1234