DEPTH DISTRIBUTIONS OF LOW-ENERGY DEUTERIUM IMPLANTED INTO SILICON AS DETERMINED BY SIMS

被引：41

作者：

MAGEE, CW

COHEN, SA

VOSS, DE

BRICE, DK

机构：

[1] PRINCETON UNIV,PLASMA PHYS LAB,PRINCETON,NJ 08540

[2] SANDIA LABS,ALBUQUERQUE,NM 87185

来源：

NUCLEAR INSTRUMENTS & METHODS | 1980年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(80)91280-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：383 / 387

页数：5

共 16 条

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[8] SECONDARY ION QUADRUPOLE MASS-SPECTROMETER FOR DEPTH PROFILING-DESIGN AND PERFORMANCE EVALUATION [J].

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[9] DEPTH PROFILING OF N-TYPE DOPANTS IN SI AND GAAS USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY IN ULTRAHIGH-VACUUM [J].

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[10] ION-BEAM SPUTTERING - EFFECT OF INCIDENT ION ENERGY ON ATOMIC MIXING IN SUBSURFACE LAYERS [J].

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