INVESTIGATION OF A TRANSITION REGION BETWEEN EPITAXIAL INP AND IN0.53GA0.47AS LAYERS IN HETEROSTRUCTURES WITH A 2-DIMENSIONAL ELECTRON-GAS

被引：0

作者：

VOROBEVA, VV

KRESHCHUK, AM

MAKAROVA, TL

NOVIKOV, SV

POGREBITSKII, KY

SAVELEV, IG

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 06期

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暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：646 / 649

页数：4

共 11 条

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