DIELECTRIC-PROPERTIES OF CHEMICALLY VAPOUR-DEPOSITED SI3N4

被引：31
作者：
GOTO, T
HIRAI, T
机构：
来源：
JOURNAL OF MATERIALS SCIENCE | 1989年 / 24卷 / 03期
关键词：
D O I：
10.1007/BF01148763
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：821 / 826
页数：6
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