RADIATIVE RECOMBINATION IN LIGHTLY AND HEAVILY DOPED P-TYPE GAAS

被引：0

作者：

NASLEDOV, DN

NEGRESKU.VV

TSARENKO.BV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 3卷 / 08期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：1012 / +

页数：1

共 22 条

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