SIMPLIFIED MODEL FOR DOMAIN DYNAMICS IN GUNN-EFFECT SEMICONDUCTORS COVERED WITH DIELECTRIC SHEETS

被引：0
作者：
ENGELMANN, R
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来源：
ELECTRONICS LETTERS | 1968年 / 4卷 / 24期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：546 / +
页数：1
相关论文
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[3]  
HARTNAGE.HL, 1968, ARCH ELEKTR UBERTRAG, V22, P225
[4]   PRINCIPLES OF A PHENOMENOLOGICAL THEORY OF GUNN-EFFECT DOMAIN DYNAMICS [J].
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SOLID-STATE ELECTRONICS, 1968, 11 (06) :583-+
[5]   NEGATIVE RESISTANCE ARISING FROM TRANSIT TIME IN SEMICONDUCTOR DIODES [J].
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BELL SYSTEM TECHNICAL JOURNAL, 1954, 33 (04) :799-826
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