HIGH-CURRENT DENSITY GA+ IMPLANTATIONS INTO SI

被引：27

作者：

HART, RR ^{[1
]}

ANDERSON, CL ^{[1
]}

DUNLAP, HL ^{[1
]}

SELIGER, RL ^{[1
]}

WANG, V ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 11期

关键词：

D O I：

10.1063/1.90986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice disorder produced in Si by a 59-keV Ga+ ion beam focused to a diameter of 1200 Å and having a current density of 1.2 A/cm2 was compared to that produced by broad area implantations of 59-keV Ga+ at a current density of 0.4 μA/cm2. Based on 140-keV proton backscattering, the disorder produced at the high-dose rate was found to be comparable although deeper than that produced by the low-dose-rate implantations. The depth profile of Ga implanted at 1.2 A/cm2 to a dose of 1.5×1015/cm2 was determined by 280-keV He++ backscattering to be basically consistent with projected range calculations.

引用

页码：865 / 867

页数：3

共 9 条

[1]

Anderson H. H., 1977, HYDROGEN STOPPING PO

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].