SUBBAND SPECTROSCOPY AT ROOM-TEMPERATURE

被引：13

作者：

SCHAFFLER, F

KOCH, F

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 37卷 / 04期

关键词：

D O I：

10.1016/0038-1098(81)90377-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：365 / 368

页数：4

共 12 条

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ANDO, T .

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[2] INTER-SUBBAND OPTICAL-ABSORPTION IN SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES [J].

ANDO, T .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03) :263-272

[3] SPECTROSCOPY OF ELECTRON SUB-BAND LEVELS IN AN INVERSION LAYER ON INSB [J].

BEINVOGL, W ;

KOCH, JF .

SOLID STATE COMMUNICATIONS, 1977, 24 (09) :687-690

[4] STRESS AND TEMPERATURE-DEPENDENCE OF SUBBAND STRUCTURE IN SILICON INVERSION LAYERS [J].

DASSARMA, S ;

KALIA, RK ;

NAKAYAMA, M ;

QUINN, JJ .

PHYSICAL REVIEW B, 1979, 19 (12) :6397-6406

[5] RESONANCE SPECTROSCOPY OF ELECTRONIC LEVELS IN A SURFACE ACCUMULATION LAYER [J].

KAMGAR, A ;

KNESCHAU.P ;

DORDA, G ;

KOCH, JF .

PHYSICAL REVIEW LETTERS, 1974, 32 (22) :1251-1254

[6] ELECTRONIC LEVELS IN SURFACE SPACE-CHARGE LAYERS ON SI(100) [J].

KNESCHAUREK, P ;

KAMGAR, A ;

KOCH, JF .

PHYSICAL REVIEW B, 1976, 14 (04) :1610-1622

[7] TEMPERATURE-DEPENDENCE OF ELECTRON INTER-SUBBAND RESONANCE ON (100) SI SURFACES [J].

KNESCHAUREK, P ;

KOCH, JF .

PHYSICAL REVIEW B, 1977, 16 (04) :1590-1596

[8]

MCCOMBE BD, UNPUBLISHED

[9]

MCCOMBE BD, 1978, 14TH P INT C PHYS SE, P1227

[10] MANY-BODY EFFECTS IN THE SI METAL-OXIDE-SEMICONDUCTOR INVERSION LAYER - SUBBAND STRUCTURE [J].

NAKAMURA, K ;

EZAWA, H ;

WATANABE, K .

PHYSICAL REVIEW B, 1980, 22 (04) :1892-1904

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