THEORETICAL ISOTHERMAL EQUATION OF STATE OF THE HIGH-PRESSURE PHASES OF SILICON

被引：3
作者：
NEETHIULAGARAJAN, A
BALASUBRAMANIAN, S
机构：
来源：
PHYSICAL REVIEW B | 1991年 / 43卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.43.13525
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The 0-K isotherms of the high-pressure hexagonal-close-packed and face-centered-cubic structures of silicon are computed using a linear muffin-tin orbital electron-band theory technique. Our theoretical pressure-volume data are fitted to the universal equation of state by least-squares procedures and the zero-pressure bulk modulus B0, its first pressure derivative B'0, and the zero-pressure volume V(n) are obtained. Our results are compared with the recent experimental and some earlier theoretical results.
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页码：13525 / 13527
页数：3
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