THEORETICAL ISOTHERMAL EQUATION OF STATE OF THE HIGH-PRESSURE PHASES OF SILICON

被引：3

作者：

NEETHIULAGARAJAN, A

BALASUBRAMANIAN, S

机构：

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.43.13525

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The 0-K isotherms of the high-pressure hexagonal-close-packed and face-centered-cubic structures of silicon are computed using a linear muffin-tin orbital electron-band theory technique. Our theoretical pressure-volume data are fitted to the universal equation of state by least-squares procedures and the zero-pressure bulk modulus B0, its first pressure derivative B'0, and the zero-pressure volume V(n) are obtained. Our results are compared with the recent experimental and some earlier theoretical results.

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页码：13525 / 13527

页数：3

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