INFRARED-ABSORPTION OF OXYGEN-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY

被引：4

作者：

LINDSTROM, JL

SVENSSON, BG

NI, WX

WILLANDER, M

机构：

[1] ROYAL INST TECHNOL,S-16428 STOCKHOLM,SWEDEN

[2] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58111 LINKOPING,SWEDEN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 117卷 / 02期

关键词：

D O I：

10.1002/pssa.2211170252

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K171 / K175

页数：5

共 17 条

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