DE HAAS-VAN ALPHEN EFFECT IN N-TYPE BI2TE3

被引：63
作者：
MALLINSON, RB
RAYNE, JA
URE, RW
机构：
来源：
PHYSICAL REVIEW | 1968年 / 175卷 / 03期
关键词：
D O I：
10.1103/PhysRev.175.1049
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：1049 / +
页数：1
相关论文
共 25 条
[1]   INFRA-RED FARADAY ROTATION AND FREE CARRIER ABSORPTION IN BI2TE3 [J].
AUSTIN, IG .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (488) :169-179
[2]   ELECTRONIC BAND STRUCTURE OF BISMUTH TELLURIDE [J].
BORGHESE, F ;
DONATO, E .
NUOVO CIMENTO B, 1968, 53 (02) :283-&
[3]   FERMI SURFACE OF CALCIUM BY DE HAAS-VAN ALPHEN EFFECT [J].
CONDON, JH ;
MARCUS, JA .
PHYSICAL REVIEW, 1964, 134 (2A) :A446-+
[4]   ANISOTROPIC GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS [J].
DRABBLE, JR ;
WOLFE, R .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (11) :1101-1108
[5]   GALVANOMAGNETIC EFFECTS IN N-TYPE BISMUTH TELLURIDE [J].
DRABBLE, JR ;
GROVES, RD ;
WOLFE, R .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459) :430-443
[6]  
DRABBLE JR, 1963, PROGRESS SEMICONDUCT, V7, P45
[7]   BAND PARAMETERS AND G-FACTOR FOR N-TYPE BI2TE3 FROM SCHUBNIKOW-DE HAAS EFFECT [J].
DRATH, P ;
LANDWEHR, G .
PHYSICS LETTERS A, 1967, A 24 (10) :504-&
[8]   STRUCTURE-CELL DATA AND EXPANSION COEFFICIENTS OF BISMUTH TELLURIDE [J].
FRANCOMBE, MH .
BRITISH JOURNAL OF APPLIED PHYSICS, 1958, 9 (10) :415-417
[9]  
GIBSON AF, 1963, PROGRESS SEMICOND ED, V7, P45
[10]  
Goldsmid H.J., 1965, MAT USED SEMICONDUCT, P165
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