SURFACE-MORPHOLOGY AND GAS-SENSING CHARACTERISTICS OF SNO2-X THIN-FILMS OXIDIZED FROM SN FILMS

被引：13

作者：

YOO, KS ^{[1
]}

CHO, NW ^{[1
]}

SONG, HS ^{[1
]}

JUNG, HJ ^{[1
]}

机构：

[1] KOREA INST SCI & TECHNOL, DIV CERAM, SEOUL 130650, SOUTH KOREA

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 25卷 / 1-3期

关键词：

GAS SENSORS; TIN OXIDE;

D O I：

10.1016/0925-4005(95)85101-1

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

SnO2-x gas sensors have been fabricated by thermal oxidation of Sn thin films. Sn thin films approximately 15000 Angstrom thick for commercial applications are deposited on a polished alumina substrate by using a high-vacuum resistance-heating evaporator. These films are oxidized at 500 degrees C in various oxygen partial pressures in order to control the x value in SnO2-x. The surface morphology and quantitative compositional analysis of SnO2-x thin films as functions of oxygen partial pressures are systematically investigated by SEM, RES and XPS. Gas sensitivities and response times of Pd-doped SnO2-x thin films to H-2, CO, C3H8 and i-C4H10 gases are measured at 300 degrees C. The relationship between gas sensitivities and the x value in SnO2-x thin films is discussed.

引用

页码：474 / 477

页数：4