SOLID-PHASE TRANSPORT AND EPITAXIAL-GROWTH OF GE AND SI

被引：23

作者：

CANALI, C

MAYER, JW

OTTAVIANI, G

SIGURD, D

VANDERWE.W

机构：

[1] INST PHYS, 41100 MODENA, ITALY

[2] CALTECH, PASADENA, CA 91109 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 01期

关键词：

D O I：

10.1063/1.1655265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3 / 5

页数：3

共 15 条

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[8] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J].

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[9] MICROANALYSIS OF MATERIALS BY BACKSCATTERING SPECTROMETRY [J].

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[10] EFFECT OF DEPOSITED METALS ON CRYSTALLIZATION TEMPERATURE OF AMORPHOUS GERMANIUM FILM [J].

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