DIFFUSION LENGTH OF HOLES IN N-ZNSE MEASURED BY SCHOTTKY-BARRIER PHOTOVOLTAGE METHOD

被引：4

作者：

KARIYAZONO, H

IDO, T

机构：

[1] Department of Electrical Engineering, Chubu University, Kasugai, Aichi, 487

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4A期

关键词：

ZNSE; DIFFUSION LENGTH; LIFETIME; SURFACE PHOTOVOLTAGE (SPV) METHOD; SCHOTTKY BARRIER PHOTOVOLTAGE (SBPV) METHOD; SCHOTTKY BARRIER; MOCVD;

D O I：

10.1143/JJAP.33.1835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The diffusion length (L) of holes in undoped n-type ZnSe has been measured by using the Schottky barrier photovoltage method. The samples measured were single crystals and epitaxial layers which were prepared by metalorganic chemical vapor deposition. The values of L were 1 mum for single crystals and 0.15 mum for epilayers. The lifetimes estimated from those values were 4.5 ns and 0.10 ns, respectively,

引用

页码：1835 / 1836

页数：2

共 10 条

[1] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J].