Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline

被引：0

作者：

Stakhira, P. ^{[1
]}

Aksimentieva, E. ^{[2
]}

Mykytyuk, Z. ^{[1
]}

Cherpak, V. ^{[1
]}

机构：

[1] Natl Univ Lvivska Politekhn, 12 S Bandery St, UA-79013 Lvov, Ukraine

[2] I Franko Lviv Natl Univ, UA-79005 Lvov, Ukraine

来源：

FUNCTIONAL MATERIALS | 2005年 / 12卷 / 04期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An electric junction between porous silicon (n-type conductivity) and conductive poly aniline (p-type conductivity) has been made by electrochemical polymerization of aniline on the porous silicon surface. This heterostructure has been found to exhibit rectifying I-V characteristics. Under illumination, a considerable increase of the current is observed with a reverse bias. The structure photosensitivity is defined mainly by two barriers, namely, by the polymer/porous silicon interphase and the porous silicon/crystalline silicon barrier.

引用

页码：807 / 809

页数：3

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