IMPACT IONIZATION IN SILICON

被引：135

作者：

CARTIER, E

FISCHETTI, MV

EKLUND, EA

MCFEELY, FR

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron dynamics for electron energies up to 5 eV has been studied by soft x-ray photoemission spectroscopy. Monte Carlo simulations have been performed to derive the energy dependence of the pair-production rate using these results in combination with published data on the ionization coefficient and on the quantum yield for pair production. The obtained ionization rate shows a very soft threshold at 1.2 eV, approaching the results by Kane [Phys. Rev. 159, 624 (1967)] at higher energies. Several published models have been found to be inconsistent with the full set of experimental data we have considered.

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页码：3339 / 3341

页数：3

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