ASSESSMENT OF DEFECTS IN AS-GROWN III-V MULTILAYER STRUCTURES BY DIFFERENTIATED CATHODOLUMINESCENCE TOPOGRAPHY (DCLT)

被引：2
作者：
BAKKER, J
DEPOORTER, J
BARTELS, WJ
DONGEN, TV
NIJMAN, W
STACY, WT
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 02期
关键词：
D O I：
10.1007/BF02670852
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：311 / 334
页数：24
相关论文
共 24 条
[1]  
[Anonymous], 1977, SEMICONDUCTOR LASERS
[2]  
[Anonymous], 1978, HETEROSTRUCTURE LASE
[3]  
BAKKER JA, UNPUBLISHED
[4]  
BALK LJ, 1976, IITRI SEM, P258
[5]   ASYMMETRY OF MISFIT DISLOCATIONS IN HETEROEPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].
BARTELS, WJ ;
NIJMAN, W .
JOURNAL OF CRYSTAL GROWTH, 1977, 37 (03) :204-214
[6]   INVESTIGATION OF INHOMOGENEITIES IN GAAS BY ELECTRON-BEAM EXCITATION [J].
CASEY, HC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :153-+
[7]   DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].
EVERHART, TE ;
HOFF, PH .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&
[8]   GAAS LASERS WITH CONSISTENTLY LOW DEGRADATION RATES AT ROOM-TEMPERATURE [J].
GOODWIN, AR ;
PETERS, JR ;
PION, M ;
BOURNE, WO .
APPLIED PHYSICS LETTERS, 1977, 30 (02) :110-113
[9]   STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS [J].
HARTMAN, RL ;
HARTMAN, AR .
APPLIED PHYSICS LETTERS, 1973, 23 (03) :147-149
[10]  
HOLT DB, QUANTITATIVE SCANNIN, pCH9
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