DISLOCATION REDUCTION BY IMPURITY DIFFUSION IN EPITAXIAL GAAS GROWN ON SI

被引：34
|
作者：
DEPPE, DG
HOLONYAK, N
HSIEH, KC
NAM, DW
PLANO, WE
MATYI, RJ
SHICHIJO, H
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 21期
关键词：
D O I：
10.1063/1.99633
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1812 / 1814
页数：3
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