DISLOCATION REDUCTION BY IMPURITY DIFFUSION IN EPITAXIAL GAAS GROWN ON SI

被引：34

作者：

DEPPE, DG

HOLONYAK, N

HSIEH, KC

NAM, DW

PLANO, WE

MATYI, RJ

SHICHIJO, H

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 21期

关键词：

D O I：

10.1063/1.99633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1812 / 1814

页数：3

共 16 条

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CHO, AY .

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[2] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

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KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[3] STABILITY OF 300-K CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL LASERS GROWN ON SI [J].

DEPPE, DG ;

NAM, DW ;

HOLONYAK, N ;

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MATYI, RJ ;

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CHUNG, HF .

APPLIED PHYSICS LETTERS, 1987, 51 (16) :1271-1273

[4] BERYLLIUM DIFFUSION ACROSS GAAS/(AL,GA)AS HETEROJUNCTIONS AND GAAS/ALAS SUPERLATTICES DURING MBE GROWTH [J].

DEVINE, RLS ;

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JOYCE, BA ;

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GOWERS, JP .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (02) :195-200

[5] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL [J].

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[6]

HIRTH JP, 1968, THEORY DISLOCATIONS, P506

[7] THERMAL ANNEALING AND PHOTOLUMINESCENCE MEASUREMENTS ON ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES WITH SE AND MG SHEET DOPING [J].

KALISKI, RW ;

NAM, DW ;

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JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :998-1005

[8]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[9] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

SHICHIJO, H ;

TSAI, HL ;

MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

[10] CRYSTAL ORIENTATIONS AND DEFECT STRUCTURES OF GAAS-LAYERS GROWN ON MISORIENTED SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

LEE, JW ;

TSAI, HL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :819-821

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