DISLOCATION REDUCTION BY IMPURITY DIFFUSION IN EPITAXIAL GAAS GROWN ON SI

[1] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[2] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 992 - 994

[3] STABILITY OF 300-K CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL LASERS GROWN ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1271 - 1273

[4] BERYLLIUM DIFFUSION ACROSS GAAS/(AL,GA)AS HETEROJUNCTIONS AND GAAS/ALAS SUPERLATTICES DURING MBE GROWTH [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (02): : 195 - 200

[5] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4617 - 4619

[6] HIRTH JP, 1968, THEORY DISLOCATIONS, P506

[7] THERMAL ANNEALING AND PHOTOLUMINESCENCE MEASUREMENTS ON ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES WITH SE AND MG SHEET DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 998 - 1005

[8] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[9] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[10] CRYSTAL ORIENTATIONS AND DEFECT STRUCTURES OF GAAS-LAYERS GROWN ON MISORIENTED SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 819 - 821

[1] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[2] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 992 - 994

[3] STABILITY OF 300-K CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL LASERS GROWN ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1271 - 1273

[4] BERYLLIUM DIFFUSION ACROSS GAAS/(AL,GA)AS HETEROJUNCTIONS AND GAAS/ALAS SUPERLATTICES DURING MBE GROWTH [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (02): : 195 - 200

[5] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4617 - 4619

[6] HIRTH JP, 1968, THEORY DISLOCATIONS, P506

[7] THERMAL ANNEALING AND PHOTOLUMINESCENCE MEASUREMENTS ON ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES WITH SE AND MG SHEET DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 998 - 1005

[8] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[9] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[10] CRYSTAL ORIENTATIONS AND DEFECT STRUCTURES OF GAAS-LAYERS GROWN ON MISORIENTED SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 819 - 821