SIMULATION OF JOSEPHSON JUNCTION IN A MICROWAVE FIELD

被引：10

作者：

KUZNIK, J ^{[1
]}

ODEHNAL, M ^{[1
]}

SEIDEL, P ^{[1
]}

机构：

[1] FRIEDRICH SCHILLER UNIV, DDR-6900 JENA, GERMANY

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 1988年 / 72卷 / 5-6期

关键词：

Computers; Analog - Computational Methods - Computers; Digital - Computational Methods - Microwaves - Absorption - Superconducting Materials - Electromagnetic Field Effects - Superconductivity - Computer Simulation;

D O I：

10.1007/BF00682150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resistively shunted junction model of a Josephson junction in a microwave field is studied using both analog and digital simulators. A comparison of the two methods shows very good agreement. Voltage-current characteristics of the Josephson junction in the low-frequency limit and their transition to chaotic behavior due to the punchthrough effect are investigated. The inverse ac effect on high-βc junctions is simulated. Fractional inverse steps are found.

引用

页码：391 / 406

页数：16

共 19 条

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