CHEMOMECHANICAL POLISHING AND ETCHING OF GAAS-IN AND GAAS IN AQUEOUS-SOLUTIONS OF NAOCL

被引：4
作者：
KHOUKH, A
KRAWCZYK, SK
OLIER, R
CHABLI, A
MOLVA, E
机构：
[1] ECOLE CENT LYON,PHYS CHIM INTERFACES LAB,CNRS,UA 404,F-69130 ECULLY,FRANCE
[2] INST RECH TECHNOL & DEV IND,ELECTR & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 07期
关键词：
SEMICONDUCTING GALLIUM COMPOUNDS - Etching - SODIUM COMPOUNDS - Solutions;
D O I：
10.1149/1.2100770
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this work, we have performed a comparative study of chemomechanical polishing and etching of GaAs:In and GaAs in aqueous solutions of NaOCl, and we reveal very different behavior of both materials. Experimental evidence shows that indium concentration in GaAs:In has a strong influence on polishing; in particular, in the case of aqueous solution of NaOCl the polishing rate increases with In concentration. The maximum concentration of NaOCl which may be used for the polishing decreases with increasing In concentration. The etching of GaAs:In with NaOCl reveals the inhomogeneity of
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页码：1859 / 1862
页数：4
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