SOME ELECTRICAL PROPERTIES OF SEMICONDUCTOR BETA-GA2O3

被引：260
作者：
LORENZ, MR
WOODS, JF
GAMBINO, RJ
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1967年 / 28卷 / 03期
关键词：
D O I：
10.1016/0022-3697(67)90305-8
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：403 / &
相关论文
共 7 条
[1]   GROWTH OF BETA-GA2O3 BY THE VERNEUIL TECHNIQUE [J].
CHASE, AB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (09) :470-470
[2]   GROWTH OF EUROPIUM-DOPED SINGLE CRYSTALS OF BAO AND SRO [J].
GAMBINO, RJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) :656-&
[3]   RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J].
HUNG, CS ;
GLIESSMAN, JR .
PHYSICAL REVIEW, 1954, 96 (05) :1226-1236
[4]   UNTERSUCHUNGEN DER ELEKTRISCHEN UND LICHTELEKTRISCHEN LEITFAHIGKEIT DUNNER INDIUMOXYDSCHICHTEN [J].
RUPPRECHT, G .
ZEITSCHRIFT FUR PHYSIK, 1954, 139 (05) :504-517
[5]   OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN BAND EDGE OF BETA-GA2O3 [J].
TIPPINS, HH .
PHYSICAL REVIEW, 1965, 140 (1A) :A316-&
[6]   ELECTRICAL PROPERTIES OF SINGLE CRYSTALS OF INDIUM OXIDE [J].
WEIHER, RL .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2834-&
[7]   ELECTROLUMINESCENCE OF GAP [J].
WOLFF, GA ;
HEBERT, RA ;
BRODER, JD .
PHYSICAL REVIEW, 1955, 100 (04) :1144-1145
1