A PECULIARITY OF ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION WITH LOW IMPLANTATION ENERGIES APPLIED TO DOPED AMORPHOUS-SILICON LAYERS

被引：2
作者：
SKORUPA, W
VOELSKOW, M
AI, JM
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 101卷 / 02期
关键词：
D O I：
10.1002/pssa.2211010243
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：K101 / K105
页数：5
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