CAPACITANCE-VOLTAGE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODE IN THE PRESENCE OF DEEP-LEVEL IMPURITIES AND SERIES RESISTANCE

被引：29
作者：
CHATTOPADHYAY, P
SANYAL, S
机构：
[1] Department of Electronic Science, University College of Science, Calcutta, 700 009
来源：
APPLIED SURFACE SCIENCE | 1995年 / 89卷 / 02期
关键词：
D O I：
10.1016/0169-4332(95)00020-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The capacitance of a Schottky barrier diode is evaluated considering the effects of deep-level impurities and the series resistance of the device. Because of the series resistance, the forward capacitance-voltage characteristics of the diode exhibit a peak. It is found that deep levels have a significant effect on the capacitance peak. The capacitance peak increases with increasing density of deep levels and decreasing value of the activation energy of the levels.
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页码：205 / 209
页数：5
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