DIRECT BONDING OF PIEZOELECTRIC CRYSTAL ONTO SILICON

被引：31

作者：

NAMBA, A

SUGIMOTO, M

OGURA, T

TOMITA, Y

EDA, K

机构：

[1] Materials and Devices Laboratory, Matsushita Electric Industrial Co. Ltd., Osaka 571

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 22期

关键词：

D O I：

10.1063/1.114896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method for bonding a piezoelectric crystal directly onto silicon, without any bonding agents, is reported. The interface microstructure, procedures of fabricating a lithium tantalate (LiTaO3)-on-silicon resonator, and its resonant characteristics are described. This technique is very promising for miniaturizing electroacoustic integrated devices. (C) 1995 American Institute of Physics.

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页码：3275 / 3276

页数：2

相关论文

共 9 条

[1] DIRECT BONDING OF QUARTZ-CRYSTAL ONTO SILICON [J].

EDA, K ;

KANABOSHI, A ;

OGURA, T ;

TAGUCHI, Y .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (07) :4801-4802

[2]

EDA K, 1994, IEEE ULTRASONICS S P, P1045

[3]

HAISMA J, 1991, 1ST P EL SOC INT S S, P675

[4] CHARACTERIZATION OF THIN ALGAAS/INGAAS/GAAS QUANTUM-WELL STRUCTURES BONDED DIRECTLY TO SIO2/SI AND GLASS SUBSTRATES [J].

KLEM, JF ;

JONES, ED ;

MYERS, DR ;

LOTT, JA .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) :459-462

[5] WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES [J].

LASKY, JB .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :78-80

[6] BONDING OF SILICON-WAFERS FOR SILICON-ON-INSULATOR [J].

MASZARA, WP ;

GOETZ, G ;

CAVIGLIA, A ;

MCKITTERICK, JB .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :4943-4950

[7]

MASZARA WP, 1991, 1ST P EL SOC INT S S, P674

[8] SILICON-TO-SILICON DIRECT BONDING METHOD [J].

SHIMBO, M ;

FURUKAWA, K ;

FUKUDA, K ;

TANZAWA, K .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) :2987-2989

[9] BUBBLE-FREE SILICON-WAFER BONDING IN A NON-CLEANROOM ENVIRONMENT [J].

STENGL, R ;

AHN, KY ;

GOSELE, U .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2364-L2366