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HIGH-EFFICIENCY MULTICRYSTALLINE SILICON SOLAR-CELLS
被引:12
作者:
ROHATGI, A
CHEN, Z
SANA, P
CROTTY, J
SALAMI, J
机构:
[1] School of Electrical Engineering, Georgia Institute of Technology, Atlanta
关键词:
D O I:
10.1016/0927-0248(94)90044-2
中图分类号:
TE [石油、天然气工业];
TK [能源与动力工程];
学科分类号:
0807 ;
0820 ;
摘要:
A detailed investigation of quality enhancement techniques, such as PECVD SiO2/SiN deposition and forming gas anneal (FGA) for defect passivation, and Al treatment for defect and impurity gettering, was conducted on several promising multicrystalline Si materials. The PECVD SiO2/SiN coating increased the bulk lifetime by a factor of 1.3 to 1.7, and decreased the surface recombination by a factor of 5-22, depending upon the multicrystalline material. FGA in conjunction with Al treatment improved the EFG sheet Si cells efficiency by 5.3% absolute, with 2.6% improvement resulting from the FGA alone, 1.5% from Al gettering alone, and 1.2% from Al diffusion and FGA interaction. Cells fabricated on various multicrystalline materials were in the efficiency range of 14.0-17.7% with highest efficiency on cast silicon from Osaka Titanium Corporation.
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页码:227 / 236
页数:10
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