INJECTION OF ELECTRONS AND ELECTRON TRAPPING LEVELS IN ANTHRACENE SINGLE-CRYSTALS

被引：0

作者：

MAKHOTENKO, AN ^{[1
]}

LITVINENKO, VY ^{[1
]}

机构：

[1] ROSTOV DON STATE UNIV, ROSTOV DON, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 7卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：439 / 439

页数：1

共 9 条

[1] ADIROVICH EI, 1961, SOV PHYS-SOL STATE, V2, P1282
[2] ADIROVICH EI, 1960, FIZ TVERD TELA, V2, P1410
[3] Fomenko V. S., 1970, EMISSION PROPERTIES
[4] Gutmann F., 1967, ORGANIC SEMICONDUCTO
[5] CHARGE CARRIER PRODUCTION AND MOBILITY IN ANTHRACENE CRYSTALS
KEPLER, RG
[J]. PHYSICAL REVIEW, 1960, 119 (04): : 1226 - 1229
[6] INJECTION CURRENTS IN INSULATORS
LAMPERT, MA
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (08): : 1781 - &
[7] MAKHOTENKO AN, 1973, FIZ TEKH POLUPROV, V7, P630
[8] SPACE-CHARGE-LIMITED CURRENTS IN ORGANIC CRYSTALS
MARK, P
HELFRICH, W
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) : 205 - &
[9] DARK INJECTION OF ELECTRONS AND HOLES AND RADIATIVE RECOMBINATION IN ANTHRACENE WITH METALLIC CONTACTS
MEHL, W
FUNK, B
[J]. PHYSICS LETTERS A, 1967, A 25 (05) : 364 - &