STOICHIOMETRY OF THIN SILICON-OXIDE LAYERS ON SILICON

被引：95
|
作者：
SIGMON, TW
CHU, WK
LUGUJJO, E
MAYER, JW
机构：
[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304
[2] CALTECH,PASADENA,CA 91109
来源：
APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 03期
关键词：
D O I：
10.1063/1.1655112
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：105 / 107
页数：3
相关论文
共 50 条
  • [31] OPTICAL CHARACTERIZATION OF SIO1.1 SILICON-OXIDE LAYERS ON INSB
    REMOND, G
    CAYE, R
    HOLLOWAY, PH
    RUZAKOWSKI, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1115 - 1119
  • [32] SILICON-OXIDE - ITS CHARACTERISTICS AND APPLICATIONS TO SILICON DEVICES
    HIRAYAMA, M
    HIRAO, T
    TSUBOUCHI, N
    DENKI KAGAKU, 1982, 50 (07): : 576 - 585
  • [33] SECONDARY ION EMISSION FROM SILICON AND SILICON-OXIDE
    MAUL, J
    WITTMAACK, K
    SURFACE SCIENCE, 1975, 47 (01) : 358 - 369
  • [34] Entrapment of Gold Catalyst in Silicon/Silicon-Oxide Nanowires
    Li, Feng Ji
    Zhang, Sam
    Lee, Jyh-Wei
    Zhao, Dongliang
    NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2014, 6 (10) : 922 - 926
  • [35] MECHANISM OF CARRIER TRANSPORT THROUGH A SILICON-OXIDE LAYER FOR [INDIUM-TIN-OXIDE/SILICON-OXIDE/SILICON] SOLAR-CELLS
    KOBAYASHI, H
    ISHIDA, T
    NAKATO, Y
    MORI, H
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) : 3931 - 3939
  • [36] Photochemistry of thin molecular films on silicon: Silicon-oxide deposition from polymerization of silsesquioxane.
    Sharma, J
    Berry, DH
    Composto, RJ
    Dai, HL
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 219 : U515 - U515
  • [37] HIGH-RESOLUTION DEPTH PROFILING OF ULTRATHIN SILICON-OXIDE NITRIDE OXIDE LAYERS
    ZHANG, Y
    OEHRLEIN, GS
    KROESEN, GMW
    WITTMER, M
    STEIN, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) : 1439 - 1441
  • [38] A NEW GROWTH-MODEL OF THIN SILICON-OXIDE IN DRY OXYGEN
    WONG, H
    CHENG, YC
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 893 - 897
  • [39] HEAT-TREATMENT AND STEAMING EFFECTS OF SILICON-OXIDE UPON ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE
    UCHIHASHI, T
    OKUSAKO, T
    SUGAWARA, Y
    YAMANISHI, Y
    OASA, T
    MORITA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A): : L1128 - L1130
  • [40] TEMPERATURE-DEPENDENCE OF CURRENTS IN THIN-FILMS OF SILICON-OXIDE
    BRAZIS, R
    PIPINYS, P
    RIMEIKA, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (01): : K69 - K71
12345