STOICHIOMETRY OF THIN SILICON-OXIDE LAYERS ON SILICON

被引：95
|
作者：
SIGMON, TW
CHU, WK
LUGUJJO, E
MAYER, JW
机构：
[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304
[2] CALTECH,PASADENA,CA 91109
来源：
APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 03期
关键词：
D O I：
10.1063/1.1655112
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：105 / 107
页数：3
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