THERMALLY-INDUCED DEFECTS IN SILICON CONTAINING OXYGEN AND CARBON

被引：81

作者：

MINAEV, NS

MUDRYI, AV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 68卷 / 02期

关键词：

D O I：

10.1002/pssa.2210680227

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：561 / 566

页数：6

共 22 条

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