Contamination and cleaning of GaAs-(100) surfaces

被引：1
作者：
Gutjahr, K
Reiche, M
Gosele, U
机构：
来源：
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷
关键词：
micro-roughness; cleaning; etching; GaAs-(100) surfaces; ATR measurements;
D O I：
10.4028/www.scientific.net/MSF.196-201.1967
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of different aqueous solutions used for etching and cleaning GaAs-(100) surfaces was investigated. Changes in the surface roughness (stylus and AFM measurements) and in the chemistry of the surface (ATR measurements) were recorded. Etching in HF solutions is shown to result in clean and smooth surfaces. The latter are of a mixed hydrophilic/hydrophobic character caused by the presence of Ga - H and OH bonds on the surface. Etching in H2SO4/H2O2- and NaOH/H2O2 mixtures causes smooth surfaces, too.
引用
收藏
页码：1967 / 1971
页数：5
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