KINETICS OF THE LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF POLYCRYSTALLINE GERMANIUM-SILICON ALLOYS FROM SIH4 AND GEH4

被引：40

作者：

HOLLEMAN, J ^{[1
]}

KUIPER, AET ^{[1
]}

VERWEIJ, JF ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 06期

关键词：

D O I：

10.1149/1.2221630

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A Langmuir-Hinshelwood growth-rate equation is presented for the germanium-silicon (GeSi) alloy deposition from GeH4 and SiH4 assuming dissociative chemisorption on a heterogeneous GeSi surface. Model parameters for the deposition kinetics have been extracted from measurements. The fit for the bond-energy of hydrogen to a germanium surface site is 30 kJ mol-1, lower compared to that of hydrogen to a silicon site. We found to a good approximation the GeSi composition of the alloy to be independent of the temperature. Moreover, the GeSi is polycrystalline down to the lowest deposition temperature we used, ie., 450-degrees-C.

引用

页码：1717 / 1722

页数：6

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