THE CHARACTERIZATION OF A PROPOSED MODEL GAAS-ANODIC OXIDE INTERFACE

被引：6

作者：

VARADARAJAN, S

LITTLEJOHN, MA

HAUSER, JR

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 04期

关键词：

D O I：

10.1007/BF02652898

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：819 / 837

页数：19

共 29 条

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