DEVICE MODEL FOR BURIED-CHANNEL CCDS AND MOSFETS WITH GAUSSIAN IMPURITY PROFILES

被引：21
|
作者：
TAYLOR, GW [1 ]
CHATTERJEE, PK [1 ]
CHAO, HH [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,ADV COMPONENTS LAB,DALLAS,TX 75265
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期
关键词：
D O I：
10.1109/T-ED.1980.19840
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：199 / 208
页数：10
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