C-V-CHARACTERISTICS OF AG-MGO-HIGH-TC SUPERCONDUCTOR MIS DIODE

被引：4

作者：

MYOREN, H

ISHIKAWA, T

OSAKA, Y

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Higashi-Hiroshima, 724, 4-1

来源：

PHYSICA C | 1991年 / 185卷

关键词：

D O I：

10.1016/0921-4534(91)91388-K

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The capacitance-voltage (C-V) characteristics were measured at various temperatures by using the Ag-MgO-high-T(c) superconductor (Ba2YCu3Ox and Bi2Sr2CaCu2Ox) MIS diode structure. Some of experimental data suggests that the intrinsic or p-type semiconductor-like layer exists at MgO-high-T(c) superconductor interface. Temperature dependence of capacitance will be discussed based on a marginal Fermi liquid theory.

引用

页码：2529 / 2530

页数：2

共 3 条

[1] SIO2 AND SI3N4 PASSIVATION LAYERS ON Y-BA-CU-O THIN-FILMS [J].

JIA, QX ;

ANDERSON, WA .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) :452-454

[2] ELECTRIC-FIELD EFFECT ON THE AL-MGO-YBA2CU3OY STRUCTURE [J].

KABASAWA, U ;

ASANO, K ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (01) :L86-L88

[3] PHENOMENOLOGY OF THE NORMAL STATE OF CU-O HIGH-TEMPERATURE SUPERCONDUCTORS [J].

VARMA, CM ;

LITTLEWOOD, PB ;

SCHMITTRINK, S ;

ABRAHAMS, E ;

RUCKENSTEIN, AE .

PHYSICAL REVIEW LETTERS, 1989, 63 (18) :1996-1999

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