RECOMBINATION IN THE END REGIONS OF PIN DIODES

被引：43
作者：
BERZ, F
COOPER, RW
FAGG, S
机构：
[1] Philips Research Laboratories, Redhill
来源：
SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 03期
关键词：
D O I：
10.1016/0038-1101(79)90039-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The recombination currents in the end regions of pin diodes have been investigated by means of an IR absorption technique. The diodes had graded doping profiles in the end regions, and a wide base (374 μm). It has been found experimentally that over a wide range of currents the recombination is proportional to the square of the injected carrier density at the junctions, which justifies the use of constant h parameters to characterise the recombination. Models of Shockley-Read recombination centres in the end regions are described, which give good agreement with experimental results. © 1979.
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页码：293 / 301
页数：9
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