ANNEALING OF ELECTRON-IRRADIATED N-TYPE SILICON - ILLUMINATION AND FLUENCE DEPENDENCE

被引：15

作者：

KIMERLING, LC

CARNES, CP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 09期

关键词：

D O I：

10.1063/1.1660768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3548 / +

页数：1

共 9 条

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[3] EFFECT OF IMPURITIES ON ANNEALING BEHAVIOR OF IRRADIATED SILICON [J].

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[4] RECOMBINATION CENTERS IN GAMMA-IRRADIATED SILICON [J].

HIRATA, M ;

SAITO, H .

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[5] ANNEALING OF ELECTRON-IRRADIATED N-TYPE SILICON .1. DONOR CONCENTRATION DEPENDENCE [J].

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CARNES, CP .

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[7] GAMMA IRRADIATION OF SILICON .2. LEVELS IN N-TYPE FLOAT-ZONE MATERIAL [J].

SONDER, E ;

TEMPLETON, LC .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) :3295-&

[8] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J].

WATKINS, GD ;

CORBETT, JW ;

WALKER, RM .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1198-1203

[9] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE + ELECTRON-NUCLEAR DOUBLE RESONANCE OF SI-E CENTER [J].

WATKINS, GD ;

CORBETT, JW .

PHYSICAL REVIEW, 1964, 134 (5A) :1359-+

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