EFFECTS OF INDIUM DOPING ON CRYSTALLINE QUALITIES OF GAAS ON SI BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

OHBU, I

ISHINO, M

MOZUME, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 04期

关键词：

D O I：

10.1063/1.100973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：396 / 397

页数：2

共 13 条

[1] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J].

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DAUTREMONTSMITH, WC ;

TU, CW ;

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :108-110

[2] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

CHOI, C ;

OTSUKA, N ;

MUNNS, G ;

HOUDRE, R ;

MORKOC, H ;

ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[3]

FISHER R, 1986, APPL PHYS LETT, V48, P1223, DOI DOI 10.1063/1.96988

[4] EVIDENCE BY RAMAN-SPECTROSCOPY AND X-RAY-DIFFRACTION OF A STRONG INFLUENCE OF H2O TRACES ON THE METALORGANIC VAPOR-PHASE EPITAXY OF GAAS ON SI [J].

FREUNDLICH, A ;

LEYCURAS, A ;

GRENET, JC ;

VERIE, C ;

HUONG, PV .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1352-1354

[5]

INOUE T, 1985, I PHYS C SER, V79, P7

[6] THE GROWTH OF GAAS ON SI BY MBE [J].

KOCH, SM ;

ROSNER, SJ ;

HULL, R ;

YOFFE, GW ;

HARRIS, JS .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :205-213

[7] ELECTRICAL-PROPERTIES OF INDIUM DOPED GAAS-LAYERS GROWN BY MBE [J].

MISSOUS, M ;

SINGER, KE ;

NICHOLAS, DJ .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :314-318

[8] STABLE CONTINUOUS ROOM-TEMPERATURE LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON SI [J].

NAM, DW ;

HOLONYAK, N ;

HSIEH, KC ;

KALISKI, RW ;

LEE, JW ;

SHICHIJO, H ;

EPLER, JE ;

BURNHAM, RD ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :39-41

[9] OBSERVATIONS OF DEFECTS IN LPE GAAS REVEALED BY NEW CHEMICAL ETCHANT [J].

NISHIZAWA, J ;

OYAMA, Y ;

TADANO, H ;

INOKUCHI, K ;

OKUNO, Y .

JOURNAL OF CRYSTAL GROWTH, 1979, 47 (03) :434-436

[10] DISLOCATION REDUCTION IN GAAS ON SI BY THERMAL CYCLES AND INGAAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

OKAMOTO, H ;

WATANABE, Y ;

KADOTA, Y ;

OHMACHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12) :L1950-L1952

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