2ND-HARMONIC GENERATION NEAR 4-MU-M IN P-TYPE ASYMMETRIC GAAS/ALGAAS/ALAS QUANTUM-WELLS

被引：3
作者：
XU, Z
FAUCHET, PM
RELLA, CW
RICHMAN, BA
SCHWETTMAN, HA
WICKS, GW
机构：
[1] STANFORD UNIV,STANFORD PICOSECOND FEL CTR,WW HANSEN EXPTL PHYS LAB,STANFORD,CA 94305
[2] UNIV ROCHESTER,INST OPT,ROCHESTER,NY 14627
来源：
SOLID STATE COMMUNICATIONS | 1995年 / 93卷 / 11期
关键词：
QUANTUM WELLS; OPTICAL PROPERTIES; NONLINEAR OPTICS;
D O I：
10.1016/0038-1098(94)00822-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report second harmonic generation measurements in p-type GaAs/Al0.5Ga0.5As/AlAs stepped quantum wells using a free electron laser tunable from 3 to 6 mu m. The peak enhancement of the second order susceptibility in singly resonant quantum wells over that of bulk GaAs is nearly one order of magnitude. The dominant contribution is from the term related to pi(xyz)((2)) and chi(zxy)((2)), which is in contrast to n-type quantum well, where chi(zzz)((2)) dominates. The enhancement peaks at 3.9 mu m, which is attributed to a single resonance corresponding to the SO-HH1 transition.
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页码：903 / 907
页数：5
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