PULSE-METHOD FOR MEASURING CARRIER-LIFETIME IN MIDDLE REGION OF PIN STRUCTURES

被引：5

作者：

BARRAU, J

BAILON, L

BRABANT, JC

BROUSSEAU, M

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1971年 / 6卷 / 01期

关键词：

D O I：

10.1051/rphysap:019710060101900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：19 / +

页数：1

共 12 条

[1]

BARON, 1965, J APPL PHYS, V37, P2614

[2]

BARSUKOV YK, 1958, SOV PHYS-TECH PHYS, P806

[3] OBSERVATIONS ON A METHOD OF DETERMINING CARRIER LIFETIME IN P+-NU-N+ DIODES [J].

BASSETT, RJ .

SOLID-STATE ELECTRONICS, 1969, 12 (05) :385-&

[4]

BROUSSEAU M, 1968, CR ACAD SCI B PHYS, V266, P502

[5] USE OF MICROWAVE TECHNIQUES FOR MEASURING CARRIER LIFETIME AND MOBILITY IN SEMICONDUCTORS [J].

BROUSSEAU, M ;

SCHUTTLER, R .

SOLID-STATE ELECTRONICS, 1969, 12 (05) :417-+

[6] USE OF P-L-N STRUCTURES IN INVESTIGATIONS OF TRANSIENT RECOMBINATION FROM HIGH INJECTION LEVELS IN SEMICONDUCTORS [J].

DAVIES, LW .

PROCEEDINGS OF THE IEEE, 1963, 51 (11) :1637-&

[7] AN EXPERIMENTAL DETERMINATION OF THE CARRIER LIFETIME IN P-I-N DIODES FROM THE STORED CARRIER CHARGE [J].

HOFFMANN, A ;

SCHUSTER, K .

SOLID-STATE ELECTRONICS, 1964, 7 (10) :717-724

[8]

LAX B, 1957, J APPL PHYS, V28, P8

[9] MEASUREMENT OF MINORITY CARRIER LIFETIME AND SURFACE EFFECTS IN JUNCTION DEVICES [J].

LEDERHANDLER, SR ;

GIACOLETTO, LJ .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (04) :477-483

[10]

SCHANGENOTTO H, 1969, SOLID ST ELECTRON, V12, P267

← 1 2 →