SI-SIO2 INTERFACE STATE SPECTROSCOPY USING MOS TUNNELING STRUCTURES

被引:30
作者
CARD, HC [1 ]
机构
[1] COLUMBIA UNIV,COLUMBIA RADIAT LAB,NEW YORK,NY 10027
关键词
D O I
10.1016/0038-1101(79)90131-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper provides a critical review and classification of the studies of SiSiO2 interface state parameters and energy distributions by means of MOS tunneling in structures with ultrathin SiO2 layers (10-100 Å). Suggestions are made of experiments that will help to elucidate the importance of materials and processing conditions on these states, and to separate the various mechanisms involving charge exchange with the metal, the conduction band, and the valence band of the semiconductor. © 1999.
引用
收藏
页码:809 / 817
页数:9
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