SIMULATION OF A MOS-TRANSISTOR WITH SPATIALLY NONUNIFORM CHANNEL PARAMETERS

被引：1
作者：
BOOTH, R
WHITE, M
机构：
[1] Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1990年 / 9卷 / 12期
关键词：
Semiconductor Devices; MOS--Modeling; -; Transistors--Modeling;
D O I：
10.1109/43.62780
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A simulation technique is described for the MOS transistor with spatially nonuniform channel parameters, such as voltage, channel width, oxide thickness, flatband voltage, and interface state density. The model is one dimensional and relies upon a charge-sheet description of the inversion layer. Simulation results are shown for the case of a transistor with a nonuniform profile of trapped negative charge. © 1990 IEEE
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页码：1354 / 1357
页数：4
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