SILICON SELECTIVE EPITAXIAL-GROWTH AND ELECTRICAL-PROPERTIES OF EPI/SIDEWALL INTERFACES

被引：27

作者：

ISHITANI, A ^{[1
]}

KITAJIMA, H ^{[1
]}

ENDO, N ^{[1
]}

KASAI, N ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 05期

关键词：

D O I：

10.1143/JJAP.28.841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：841 / 848

页数：8

共 16 条

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REID, GA ;

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APPLIED PHYSICS LETTERS, 1988, 52 (07) :546-548

[2]

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[3]

Endo N., 1987, Proceedings of the First International Symposium on Ultra Large Integration Science and Technology: ULSI Science and Technology/1987, P64

[4]

ENDO N, 1984, IEEE T ELECTRON DEV, V31, P1283, DOI 10.1109/T-ED.1984.21701

[5] SELECTIVE EPITAXIAL-GROWTH FOR THE FABRICATION OF CMOS INTEGRATED-CIRCUITS [J].

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[6] SELECTIVE SILICON EPITAXIAL GROWTH FOR DEVICE-ISOLATION TECHNOLOGY. [J].

Ishitani, Akihiko ;

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Tsuya, Hideki .

Microelectronic Engineering, 1986, 4 (01) :3-33

[7] CHARGE-TRANSFER ADSORPTION IN SILICON VAPOR-PHASE EPITAXIAL-GROWTH [J].

ISHITANI, A ;

TAKADA, T ;

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JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) :390-394

[8] LOCAL LOADING EFFECT IN SELECTIVE SILICON EPITAXY [J].

ISHITANI, A ;

ENDO, N ;

TSUYA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L391-L393

[9] FACET FORMATION IN SELECTIVE SILICON EPITAXIAL-GROWTH [J].

ISHITANI, A ;

KITAJIMA, H ;

ENDO, N ;

KASAI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (10) :1267-1269

[10]

ISHITANI A, 1987, 10TH INT C CVD HAW, P355

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