SIMULATIONS OF CRYSTAL-GROWTH - EFFECTS OF ATOMIC-BEAM ENERGY

被引：57

作者：

GILMER, GH

ROLAND, C

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 07期

关键词：

D O I：

10.1063/1.112243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have simulated silicon molecular beam epitaxy on (100) and (111) substrates using molecular dynamics methods. We find that the kinetic energy of the atomic beam has a dramatic effect on the crystalline ordering in the deposit. Energetic beams form a crystalline film at less than half the absolute temperature required for a thermal beam. Our simulations show that crystallization is facilitated by the transient atomic motion just after the impact of an atom from the beam.

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页码：824 / 826

页数：3

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