DIRECT SYNTHESIS OF SEMICONDUCTOR QUANTUM-WIRE AND QUANTUM-DOT STRUCTURES

被引：54
|
作者：
NOTZEL, R
PLOOG, KH
机构：
[1] Max-Planck-Institut Für Festkörperforschung, Stuttgart, W-7000
[2] Paul-Drude-Institut für Festkörperelektronik, Berlin, O-1086
来源：
ADVANCED MATERIALS | 1993年 / 5卷 / 01期
关键词：
D O I：
10.1002/adma.19930050104
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The quantum confinement of electrons and holes in low-dimensional semiconductor structures strongly influences the properties of ''quantum wires and dots'' and therefore has an important impact on the performance of high-speed electron and optoelectronic devices. The fabrication of such structures using. for example, molecular beam epitaxy and metal-or-organic vapor phase epitaxy, their characterization, and their use in heterojunctions, quantum wells, and high electron mobility transistors are reviewed.
引用
收藏
页码：22 / 29
页数：8
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