Electrochemical Preparation of Indidum Sulfide Thin Film as a Buffer Layer of CIGS Solar Cell

被引:0
|
作者
Kim, Hyeon Jin [1 ]
Kim, Kyuwon [1 ]
机构
[1] Univ Incheon, Dept Chem, Incheon 406772, South Korea
来源
JOURNAL OF THE KOREAN ELECTROCHEMICAL SOCIETY | 2011年 / 14卷 / 04期
关键词
Solarcell; CIGS; Buffer layer; Indium sulfide; Electrochemistry;
D O I
10.5229/JKES.2011.14.4.225
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
CIGS solar cells are kind of thin film solar cells, which are studied several years. CdS buffer layer that makes heterojunction between window layer and absorbing layer was one of issue in the CIGS solar cell study. New types of buffer layer consisted of indium sulfide are being studied these days owing to high price and environmental harmful of CdS. In this study, we demonstrated electrochemical synthesis of indium sulfide film as a buffer layer, which is cheaper and faster than other methods. A uniform indium sulfide film was obtained by applying two different alternating potentials. The band gap of the film was optimized by controlling temperature during the electrochemical synthesis. Using x-ray photoelectron spectroscopy and diffraction method we confirmed that beta-indium sulfide was formed on ITO electrode surface.
引用
收藏
页码:225 / 230
页数:6
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