CAPACITANCE ENERGY LEVEL SPECTROSCOPY OF DEEP-LYING SEMICONDUCTOR IMPURITIES USING SCHOTTKY BARRIERS

被引：150
作者：
ROBERTS, GI
CROWELL, CR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 04期
关键词：
D O I：
10.1063/1.1659102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1767 / +
页数：1
相关论文
共 15 条
[1]   SURFACE STATE AND INTERFACE EFFECTS ON CAPACITANCE-VOLTAGE RELATIONSHIP IN SCHOTTKY BARRIERS [J].
CROWELL, CR ;
ROBERTS, GI .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3726-&
[2]  
CROWELL CR, TO BE PUBLISHED
[3]   THE CHARGE AND POTENTIAL DISTRIBUTIONS AT THE ZINC OXIDE ELECTRODE [J].
DEWALD, JF .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03) :615-639
[4]   METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].
GOODMAN, AM .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&
[5]   FREEZE-OUT CHARACTERISTICS OF MOS VARACTOR [J].
GRAY, PV ;
BROWN, DM .
APPLIED PHYSICS LETTERS, 1968, 13 (08) :247-&
[6]  
PEREL VI, 1968, SOV PHYS SEMICOND+, V1, P1403
[7]   FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J].
SAH, CT ;
REDDI, VGK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :345-+
[8]  
SAH CT, 1964, 1 U ILL SOL STAT EL
[9]   MINORITY CARRIER INJECTION AND CHARGE STORAGE IN EPITAXIAL SCHOTTKY BARRIER DIODES [J].
SCHARFETTER, DL .
SOLID-STATE ELECTRONICS, 1965, 8 (03) :299-+
[10]   EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE [J].
SCHIBLI, E ;
MILNES, AG .
SOLID-STATE ELECTRONICS, 1968, 11 (03) :323-+
12