METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP

被引：33

作者：

YOSHINO, J

IWAMOTO, T

KUKIMOTO, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90273-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：74 / 78

页数：5

共 10 条

[1] COMPOSITION STUDIES OF MBE GALNP ALLOYS BY RUTHERFORD SCATTERING AND X-RAY-DIFFRACTION [J].

BLOOD, P ;

BYE, KL ;

ROBERTS, JS .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1790-1797

[2] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J].

DUCHEMIN, JP ;

BONNET, M ;

KOELSCH, F ;

HUYGHE, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1134-1149

[3] GROWTH OF IN(1-X) GAXP P-N JUNCTIONS BY LIQUID PHASE EPITAXY [J].

HAKKI, BW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1469-&

[4]

HIRTZ JP, 1980, ELECTRON LETT, V16, P277

[5] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP [J].

HITCHENS, WR ;

HOLONYAK, N ;

LEE, MH ;

CAMPBELL, JC .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :154-165

[6]

KRESSEL H, 1978, J APPL PHYS, V49, P3140, DOI 10.1063/1.325307

[7] PREPARATION AND PROPERTIES OF VAPOR-GROWN IN 1-XGAXP [J].

NUESE, CJ ;

RICHMAN, D ;

CLOUGH, RB .

METALLURGICAL TRANSACTIONS, 1971, 2 (03) :789-&

[8]

Stringfellow G. B., 1972, J ELECTRON MATER, V1, P437

[9] IMPORTANCE OF LATTICE MISMATCH IN GROWTH OF GAXIN1-XP EPITAXIAL CRYSTALS [J].

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3455-+

[10] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP (X APPROXIMATELY 0.5) ON GAAS [J].

YOSHINO, J ;

IWAMOTO, T ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :L290-L292

← 1 →