GROWTH OF GAAS CRYSTALS IN THE (111) POLAR DIRECTION

被引：19

作者：

MOODY, PL

GATOS, HC

LAVINE, MC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1960年 / 31卷 / 09期

关键词：

D O I：

10.1063/1.1735930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1696 / 1697

页数：2

相关论文

共 5 条

[1] ON THE GROWTH OF GALLIUM ARSENIDE CRYSTALS FROM THE MELT [J].

ELLIS, SG .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (06) :947-948

[2] GROWTH OF INSB CRYSTALS IN THE (111) POLAR DIRECTION [J].

GATOS, HC ;

MOODY, PL ;

LAVINE, MC .

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[3] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].

GATOS, HC ;

LAVINE, MC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :427-433

[4] SYRINGE-TYPE SINGLE-CRYSTAL FURNACE FOR MATERIALS CONTAINING A VOLATILE CONSTITUENT [J].

MOODY, PL ;

KOLM, C .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1958, 29 (12) :1144-1145

[5] GROWTH OF GALLIUM ARSENIDE BY HORIZONTAL ZONE MELTING [J].

RICHARDS, JL .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (03) :600-603